NTE61 transistors equivalent, silicon complementary transistors.
D High Safe Operating Area: 250W @ 50V D For Low Distortion Complementary Designs D High DC Current Gain: hFE = 25 Min @ IC = 5A
Absolute Maximum Ratings:
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Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed.
The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.
Features: D High Safe Operating Area: 250W @ 50V D For Low Distor.
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