NTE55 transistors equivalent, silicon complementary transistors.
D DC Current Gain Specified to 4A:
hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A
D Collector
–Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current .
Features: D DC Current Gain Specified to 4A:
hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A
D Collector
–Emit.
The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications.
Features: D DC Current Gain Specified to 4A:
hFE = 40 Min @ IC = 3A = 20 MIn @ IC.
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