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NTE55 - Silicon Complementary Transistors

Download the NTE55 datasheet PDF. This datasheet also covers the NTE54 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications.

Features

  • D DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain.
  • Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 150V Collector.
  • Base Voltage, VCBO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE54_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE55
Manufacturer NTE Electronics (defunct)
File Size 23.30 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE55 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTE5550 (NTE5550 - NTE5558) Silicon Controlled Rectifiers NTE Electronics
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NTE5554 Silicon Controlled Rectifiers NTE Electronics
NTE5556 Silicon Controlled Rectifiers NTE Electronics
NTE5558 Silicon Controlled Rectifiers NTE Electronics

Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE5500 Silicon Controlled Rectifier
NTE5509 Silicon Controlled Rectifier
NTE5511 Silicon Controlled Rectifier
NTE5513 Silicon Controlled Rectifier
NTE5514 Silicon Controlled Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE54 (NPN) & NTE55 (PNP) Silicon Complementary Transistors High Frequency Driver for Audio Amplifier Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications. Features: D DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain–Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .