NTE50 transistors equivalent, silicon complementary transistors.
D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C
Absolute Maximum Ratings: Collector
–Em.
Features: D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = .
The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.
Features: D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D H.
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