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NTE4164 - high speed Dynamic Random Access Memory

General Description

The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16

Lead DIP type package organized as 65,536 words of one bit each.

Refresh period is extended to 4 milliseconds, and during this period each of the 256 rows must be strobed with RAS in order to retain data.

Key Features

  • D 65,536 x 1 Organization D Single +5V Supply (10% Tolerance) D Upward Pin Compatible with 4116 (16K Dynamic RAM) D Max Access Time from RAS: Less than 150ns D Min Cycle Time (Read or Write): Less than 260ns D Lon.

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Datasheet Details

Part number NTE4164
Manufacturer NTE Electronics (defunct)
File Size 236.75 KB
Description high speed Dynamic Random Access Memory
Datasheet download datasheet NTE4164 Datasheet

Full PDF Text Transcription for NTE4164 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NTE4164. For precise diagrams, and layout, please refer to the original PDF.

NTE4164 Integrated Circuit NMOS, 64K Dynamic RAM, 150ns 16−Lead DIP Type Package Description: The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16−Lead...

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E4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16−Lead DIP type package organized as 65,536 words of one bit each. Refresh period is extended to 4 milliseconds, and during this period each of the 256 rows must be strobed with RAS in order to retain data. CAS can remain high during the refresh sequence to conserve power. All inputs and outputs, including clocks, are compatible with Series 74TTL. All address lines and data−in are latched on chip to simplify system design. Data−out is unlatched to allow greater system flexibility. Pin1 has no internal connections to allow compatibility with other 64K RAMs usin

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