D 65,536 x 1 Organization D Single +5V Supply (10% Tolerance) D Upward Pin Compatible with 4116 (16K Dynamic RAM) D Max Access Time from RAS: Less than 150ns D Min Cycle.

The NTE4164 is a high speed Dynamic Random Access Memory (DRAM) in a 16−Lead DIP type package organized as 65,536 words of one bit each. Refresh period is extended to 4 milliseconds, and during this period each of the 256 rows must be strobed with R.

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