NTE2925 datasheet, mosfet equivalent, NTE

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D Low Drain−Source ON Resistance: RDS(ON) = 1.35 Typ. D High Forward Transfer Admittance: |Yfs| = 5.0S Typ. D Low Leakage Current: IDSS = 100A Max. (VDS = 640V) D Enh.

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NTE2925

N-Channel

MOSFET

NTE

Manufacturer

NTE

Related datasheet

NTE2925 Datasheet, NTE

Features and benefits