NTE281 datasheet, transistors equivalent, NTE

Features and benefits

D High Power Dissipation: PC = 100W D Collector
–Emitter Breakdown Voltage: V(BR)CEO = 140V Absolute Maximum Ratings: (TA = +25°C unless otherwise specif.

Application

Features: D High Power Dissipation: PC = 100W D Collector
–Emitter Breakdown Voltage: V(BR)CEO = 140V .

Description

The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications. Features: D High Power Dissipation: PC = 100W D Collector
&.

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