NTE262 amplifier equivalent, silicon complementary transistors darlington power amplifier.
D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector
–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector
–Emi.
Features: D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector
–Emitter Sustaining Voltage: VCEO.
The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low
–speed switching applications.
Features: D High DC Current Gain: hFE = 250.
Image gallery
TAGS
Download