NTE252 transistors equivalent, silicon complementary transistors.
D High DC Current Gain @ IC = 10A:
hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector
–Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolit.
Features: D High DC Current Gain @ IC = 10A:
hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector
 .
The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general
–purpose amplifier and low
–frequency switching applications.
Features: D High DC Current Gain @.
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