NTE2362 transistors equivalent, silicon complementary transistors.
D Very Small
–Sized Package D High Breakdown Voltage: VCEO = 50V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector
&nb.
The high gain of these devices makes it possible for them to be driven directly from integrated circuits.
Features: D .
The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general
–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly f.
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