NTE2350 transistors equivalent, silicon darlington transistors.
D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A
D Diode Protection to Rated IC D Monolithic Construction w/Built
–In Base
Features:
D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A
D Diode Protection to Rated I.
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.
Features:
D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A h.
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