NTE2350
Overview
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.
- High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A
- Diode Protection to Rated IC
- Monolithic Construction w/Built-In Base-Emitter Shunt Resistor
- Junction Temperature to +200°C
