NTE2346 transistors equivalent, silicon complementary transistors.
D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V D Junction Temperature to +150°C
Absolute Maximum Ratings:
Collector
–Emitter Voltage, VCEO ..
.
Features: D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V D Junction Temperature to +150°C
Absolute Maxi.
The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT
–82 type package designed for use in audio output stages and general amplifier and switching applications..
Features: D High DC Current Ga.
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