NTE2306 transistors equivalent, silicon complementary transistors.
D High Collector
–Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector
–Emitter Satu.
and high voltage switching regulator circuits.
Features: D High Collector
–Emitter Sustaining Voltage: V.
The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.
Features: D High Collector
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