NTE219 transistor equivalent, silicon power transistor.
D DC Current Gain: hFE = 20
– 70 @ IC = 4A D Collector
–Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Opera.
Features:
D DC Current Gain: hFE = 20
– 70 @ IC = 4A D Collector
–Emitter Saturation Vo.
The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.
Features:
D DC Current Gain: hFE = 20
– 70 @ IC = 4A D Collector
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