NTE2147 Datasheet, NTE

associated with non−clocked static memories and the reduced standby power dissipation associated with clocked static memories. The result is low standby power dissipation.

The NTE2147 is a 4096−bit static Random Access Memory (SRAM) in an 18−Lead DIP type package organized as 4096 words by 1−bit. Using a scaled NMOS technology, it incorporates an innovative design approach which provides the ease−of−use features assoc.