NTE189 transistors equivalent, silicon complementary transistors.
D High Collector−Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector−Emitter Voltage.
Features: D High Collector−Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA D High Power Dissipation: PD = 10W @ TC.
The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a T O202N type package designed for general purpose, high voltage amplifier and driver applications. Features: D High Collector−Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC.
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