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NTE

MPSA55 Datasheet Preview

MPSA55 Datasheet

Silicon PNP Transistor

No Preview Available !

MPSA55 & MPSA56
Silicon PNP Transistor
General Purpose Amplifier
Absolute Maximum Ratings:
CollectorEmitter
MPSA55 .
Voltage,
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V. .C.E.S.
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60V
MPSA56 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
CollectorBase Voltage,
MPSA55 . . . . . . .
V. .C.B.O.
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60V
MPSA56 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total
DDeveircaeteDAisbsoipvaeti2o5n°(CTA.
=
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25°C),
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.P.D.
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625mW
5mW/°C
Total
DDeveircaeteDAisbsoipvaeti2o5n°(CTC.
=
..
25°C),
......
.P. D.
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. . . . 1.5W
12mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Thermal Resistance, JunctiontoCase, RqJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W
Thermal Resistance, JunctiontoAmbient, RqJA (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
OFF Characteristics
CollectorEmitter Breakdown Voltage
MPSA55
MPSA56
V(BR)CEO IC = 1.0mA, IB = 0, Note 2
60
80
EmitterBase Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
MPSA55
MPSA56
ON Characteristics
V(BR)EBO
ICES
ICBO
IE = 100mA, IC = 0
VCE = 60V, IB = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
4.0 − −
− − 0.1
− − 0.1
− − 0.1
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
hFE
VCE(sat)
VBE(on)
VCE = 1.0V, IC = 10mA
VCE = 1.0V, IC = 100mA
IC = 100mA, IB = 10mA
IC = 100mA, VCE = 1.0V
100 − −
100 − −
− − 0.25
− − 1.2
Note 1. RqJA is measured with the device soldered into a typical printed circuit board.
Note 2. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
Unit
V
V
V
mA
mA
mA
V
V




NTE

MPSA55 Datasheet Preview

MPSA55 Datasheet

Silicon PNP Transistor

No Preview Available !

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Small Signal Characteristics
Current Gain Bandwidth Product
ft IC = 100mA, VCE = 1V, f = 100Mhz, Note 3 50 − −
Note 3. ft is defined as the frequency at which |hfe| extrapolates to unity.
Unit
MHz
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
EBC
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max


Part Number MPSA55
Description Silicon PNP Transistor
Maker NTE
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MPSA55 Datasheet PDF






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