MJE4353 Datasheet, NTE

D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Ma.

and high voltage switching regulator circuits. Features: D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V .

The MJE4343 (NPN) and MJE4353 (PNP) are silicon complementary transistors in a TO−3PN type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: D High Collector−Emitter Sustain.