MJE15031 datasheet, transistors equivalent, NTE

Features and benefits

D DC Current Gain Specified to 4A: hFE = = 40 20 Min MIn @ @ IICC = = 3A 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain−B.

Application

Features: D DC Current Gain Specified to 4A: hFE = = 40 20 Min MIn @ @ IICC = = 3A 4A D Collector−Emitter Su.

Description

The MJE15030 (NPN) and MJE15031 (PNP) are silicon complementary transistors in a TO−220 type case designed for use as a high frequency driver in audio amplifier applications. Features: D DC Current Gain Specified to 4A: hFE = = 40 20 Min MIn .

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