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MJ15004 - Silicon Complementary Transistors

Download the MJ15004 datasheet PDF. This datasheet also covers the MJ15003 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The MJ15003 (NPN) and MJ15004 (PNP) are complementary silicon power transistors in a TO

3 type package designed for high power audio, disk head positioners, and other linear applications.

Key Features

  • D High Safe Operating Area: 250W @ 50V D For Low Distortion Complementary Designs D High DC Current Gain: hFE = 25 Min @ IC = 5A Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO(sus).
  • . . . . 140V Collector.
  • Base Voltage, VCBO.
  • . . . . 140V Emitter.
  • Base Voltage, VEBO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJ15003-NTE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJ15004
Manufacturer NTE Electronics (defunct)
File Size 63.91 KB
Description Silicon Complementary Transistors
Datasheet download datasheet MJ15004 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
MJ15003 Silicon Complementary Transistors
MJ15015 Silicon Complementary Transistors
MJ15016 Silicon Complementary Transistors
MJ10001 Silicon NPN Transistor
MJ10004 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MJ15003 (NPN) & MJ15004 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications TO−3 Type Package Description: The MJ15003 (NPN) and MJ15004 (PNP) are complementary silicon power transistors in a TO−3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D High Safe Operating Area: 250W @ 50V D For Low Distortion Complementary Designs D High DC Current Gain: hFE = 25 Min @ IC = 5A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .