MJ10021 transistor equivalent, npn silicon power darlington transistor.
D Collector−Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min) D 175 Watts Capability at 50 Volts
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . ..
Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min) D 175 Watts Capability at 50 Volts
Absolut.
The MJ10012 is high−voltage, high−current Darlington transistor in a TO3 type package designed for automotive ignition, switching regulation and motor control applications.
Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min) .
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