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BDV65 Datasheet, NTE

BDV65 transistors equivalent, silicon npn transistors.

BDV65 Avg. rating / M : 1.0 rating-12

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BDV65 Datasheet

Features and benefits

D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built−In B.

Application

Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Collector−Emitter Saturation Voltage: VCE(sat).

Description

The BDV64 (PNP) and BDV65 (NPN) are silicon Darlington complementary power transistors in a TO−3PN type package designed for general purpose amplifier and low speed switching applications. Features: D Collector−Emitter Sustaining Voltage: VCEO(sus).

Image gallery

BDV65 Page 1 BDV65 Page 2

TAGS

BDV65
Silicon
NPN
Transistors
NTE

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