BDV65 transistors equivalent, silicon npn transistors.
D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built−In B.
Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Collector−Emitter Saturation Voltage: VCE(sat).
The BDV64 (PNP) and BDV65 (NPN) are silicon Darlington complementary power transistors in a TO−3PN type package designed for general purpose amplifier and low speed switching applications.
Features: D Collector−Emitter Sustaining Voltage: VCEO(sus).
Image gallery
TAGS
Download (Size : 61.95KB)