logo

2N6387 Datasheet, NTE

2N6387 transistor equivalent, silicon npn transistor.

2N6387 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 64.80KB)

2N6387 Datasheet
2N6387
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 64.80KB)

2N6387 Datasheet

Features and benefits

D High DC Current Gain: hFE = 2500 Typ D Collector−Emitter Sustaining Voltage (@ 100mA): 2N6387: VCEO(sus) = 60V Min 2N6387: VCEO(sus) = 80V Min D Low Collector−Emitter .

Application

Features: D High DC Current Gain: hFE = 2500 Typ D Collector−Emitter Sustaining Voltage (@ 100mA): 2N6387: VCEO(sus) = .

Description

The 2N6387 and 2N6388 are silicon NPN Darlington power transistors in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D High DC Current Gain: hFE = 2500 Typ D Collector−Emitter Sustaining .

Image gallery

2N6387 Page 1 2N6387 Page 2

TAGS

2N6387
Silicon
NPN
Transistor
NTE

Manufacturer


NTE

Related datasheet

2N6380

2N6381

2N6382

2N6383

2N6384

2N6385

2N6386

2N6388

2N6389

2N6300

2N6301

2N6302

2N6303

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts