2N6123 transistor equivalent, silicon npn transistor.
D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Collector−Emitter Saturation Voltage: VCE(sat) = 600mV Max @ IC = 1.5A, IB = 150mA
Absolute Maximum Rating.
Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Collector−Emitter Saturation Voltage: VCE(sat).
The 2N6123 is a silicon NPN transistor in a TO−220 type package designed for use in power amplifier and switching circuit applications.
Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Collector−Emitter Saturation Voltage: VC.
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