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2N6109 Datasheet, NTE

2N6109 transistor equivalent, silicon pnp transistor.

2N6109 Avg. rating / M : 1.0 rating-11

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2N6109 Datasheet

Features and benefits

D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 50V Min D High Current−Gain Bandwidth Product: fT = 10.

Application

Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Voltage: VCEO(.

Description

The 2N6109 is a silicon PNP transistor in a TO−220 type package designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Voltag.

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2N6109 Page 1 2N6109 Page 2

TAGS

2N6109
Silicon
PNP
Transistor
2N6100
2N6101
2N6102
NTE

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