2N5685
Silicon NPN Transistor
High Power, High Current Switch
TO−3 Type Package
Description:
The 2N5685 is a NPN power transistor a TO−3 type case designed for use in high power amplifier and
switching circuit applications.
Features:
D High Current Capability: IC = 50A (Continuous)
D DC Current Gain: hFE= 15 to 60 @ IC = 25Adc
D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25Adc
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total
DDeveircaeteDAisbsoipvaeti2o5n(CTC.
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. . . . 300W
1.715W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus)
ICEO
ICEX
ICBO
IEBO
IC = 0.2A, IB = 0,
VCE = 30V, IB = 0
VCE = 60V, VEB(off) = 1.5V
VCE = 60V, VEB(off) = 1.5V, TC = +150C
VCB = 60V, IE = 0
VBE = 5V, IC = 0
60
−
−
−
−
−
−
−
−
−
−
−
−V
1 mA
2 mA
10 mA
2 mA
5 mA
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