2N5496 transistor equivalent, silicon npn transistor.
D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 70V Min D High Current−Gain Bandwidth Product: fT = 4M.
Features:
D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Voltage: VCEO(.
The 2N5496 is a silicon NPN transistors in a TO−220 type package designed for use in general purpose amplifier and switching applications.
Features:
D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Volta.
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