2N4912 transistor equivalent, silicon npn transistor.
D Low Collector−Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A D Excellent safe Operating Area
D Gain Specified to IC = 1A
Absolute Maximum Ratings:
Colle.
Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A D Excellent safe Operating Area.
The 2N4912 silicon NPN transistor in a TO−66 type package designed for driver circuits and switching and amplifier applications.
Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A D Excellent safe Operating Area
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