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2N4912 - Silicon NPN Transistor

General Description

The 2N4912 silicon NPN transistor in a TO

66 type package designed for driver circuits and switching and amplifier applications.

Key Features

  • D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A D Excellent safe Operating Area D Gain Specified to IC = 1A Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCBO.
  • 80V Emitter.
  • Base Voltage, VEBO.

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Datasheet Details

Part number 2N4912
Manufacturer NTE Electronics (defunct)
File Size 61.60 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2N4912 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N4912 Silicon NPN Transistor High Voltage, Medium Power Switch TO−66 Type Package Description: The 2N4912 silicon NPN transistor in a TO−66 type package designed for driver circuits and switching and amplifier applications. Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A D Excellent safe Operating Area D Gain Specified to IC = 1A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .