2N3714 transistor equivalent, silicon npn transistor.
D Gain Ranged Specified at 1A and 3A
D Low Collector−Emitter Saturation Voltage: VCE9sat) = 0.5V (Typ) @ IC = 5A, IB = 500mA D Excellent Safe Operating Areas
Absolute M.
Features: D Gain Ranged Specified at 1A and 3A
D Low Collector−Emitter Saturation Voltage: VCE9sat) = 0.5V (Typ) @ IC .
The 2N3714 is a silicon NPN transistor in a TO−3 type package designed for medium speed switching and amplifier applications.
Features: D Gain Ranged Specified at 1A and 3A
D Low Collector−Emitter Saturation Voltage: VCE9sat) = 0.5V (Typ) @ IC = 5A.
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