NSM2012 Overview
NSM2012 High-Accuracy, Hall-Effect-Based Current Sensor IC with mon-Mode Field Rejection in 3kV Isolation Datasheet (EN) 1.2 Product Overview NSM2012 is an integrated path current sensor with a very low on-resistance of 1.2mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal...
NSM2012 Key Features
- High bandwidth and fast response time
- 400kHz bandwidth
- 1.5us response time
- High-precision current measurement
- Differential Hall sets can immune stray field
- High isolation level that meets UL standards
- Withstand isolation voltage (VISO): 3000Vrms
- Maximum surge isolation withstand voltage (VIOSM)
- CMTI > 100V/ns
- CTI（I）