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NSM2012 Datasheet Hall-Effect-Based Current Sensor IC

Manufacturer: NOVOSENSE

Overview: NSM2012 High-Accuracy, Hall-Effect-Based Current Sensor IC with Common-Mode Field Rejection in 3kV Isolation Datasheet (EN) 1.2 Product Overview NSM2012 is an integrated path current sensor with a very low on-resistance of 1.2mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar. A differential Hall pair is used internally, so it has a strong immunity to external stray magnetic fields. NSM2012 supports both a ratiometric output and a fixed output mode. The fixed mode enables customers to use ADC differential sampling of VREF and VOUT voltages to reduce external common-mode (such as temperature,etc). Compared with the current sampling method of the Shunt+ isolated op amp, NSM2012 eliminates the need for the primary side power supply and has a simple and convenient layout. At the same time, it has extremely high isolation withstand voltage and Lifetime stability. In high-side current monitoring applications, NSM2012 can reach a working voltage of 600Vpk, and it can withstand 6kV surge voltage without adding any protection devices. Due to NSM2012 internal accurate temperature compensation algorithm and factory accuracy calibration, this current sensor can maintain good accuracy in the full temperature working range, and the customer does not need to do secondary programming or calibration. Support 3.

Key Features

  • High bandwidth and fast response time.
  • 400kHz bandwidth.
  • 1.5us response time.
  • High-precision current measurement.
  • Differential Hall sets can immune stray field.
  • High isolation level that meets UL standards.
  • Withstand isolation voltage (VISO): 3000Vrms.
  • Maximum surge isolation withstand voltage (VIOSM): 6kV.
  • CMTI > 100V/ns.
  • CTI(I).
  • Creepage distance/Clearance distance: 4mm.