2406KL-04W-B40 Overview
Description
This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- RDS(on) = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A
- Low Gate Charge ( Typ. 14nC)
- Low Crss ( Typ. 5pF)
- Fast Switching
- 100% Avalanche Tested
- Improve dv/dt Capability
- ESD Improved Capability
- RoHS Compliant
