NIKO-SEM
N-Channel Logic Level Enhancement
PZ2N7002Y
Mode Field Effect Transistor
SOT-323
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 2Ω
ID
290mA
ESD Protected Gate
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 ° C
TA = 70 ° C
Power Dissipation
TA = 25 ° C
TA = 70 ° C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
LIMITS
60
±20
290
230
1
0.34
0.21
-40 to 150
UNITS
V
V
mA
A
W
°C
MAXIMUM
368
UNITS
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
Drain-Source On-State Resistance1 RDS(ON)
Forward Transconductance1
gfs
STATIC
VGS = 0V, ID = 100A
VDS = VGS, ID = 100A
VDS = 0V, VGS = ±16V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 ° C
VDS = 10V, VGS = 10V
VGS = 3.5V, ID = 10mA
VGS = 4.5V, ID = 100mA
VGS = 10V, ID = 200mA
VDS = 20V, ID = 200mA
MIN
LIMITS
TYP MAX
UNIT
60
1.0 1.8 2.5
V
±30 A
1
A
10
1A
2.1 5
1.7 3 Ω
1.6 2
0.5 S
REV 0.8
C-44-2
1
