900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






NIKO-SEM

PZ2N7002Y Datasheet Preview

PZ2N7002Y Datasheet

N-Channel Field Effect Transistor

No Preview Available !

NIKO-SEM
N-Channel Logic Level Enhancement
PZ2N7002Y
Mode Field Effect Transistor
SOT-323
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 2Ω
ID
290mA
ESD Protected Gate
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 ° C
TA = 70 ° C
Power Dissipation
TA = 25 ° C
TA = 70 ° C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
LIMITS
60
±20
290
230
1
0.34
0.21
-40 to 150
UNITS
V
V
mA
A
W
°C
MAXIMUM
368
UNITS
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
Drain-Source On-State Resistance1 RDS(ON)
Forward Transconductance1
gfs
STATIC
VGS = 0V, ID = 100A
VDS = VGS, ID = 100A
VDS = 0V, VGS = ±16V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 ° C
VDS = 10V, VGS = 10V
VGS = 3.5V, ID = 10mA
VGS = 4.5V, ID = 100mA
VGS = 10V, ID = 200mA
VDS = 20V, ID = 200mA
MIN
LIMITS
TYP MAX
UNIT
60
1.0 1.8 2.5
V
±30 A
1
A
10
1A
2.1 5
1.7 3 Ω
1.6 2
0.5 S
REV 0.8
C-44-2
1




NIKO-SEM

PZ2N7002Y Datasheet Preview

PZ2N7002Y Datasheet

N-Channel Field Effect Transistor

No Preview Available !

NIKO-SEM
N-Channel Logic Level Enhancement
PZ2N7002Y
Mode Field Effect Transistor
SOT-323
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = 25V, f = 1MHz
36
10 pF
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Crss
Qg
Qgs
Qgd
VDS = 30V , VGS = 10V,
ID = 1A
6
1.6
0.2
1
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
nC
Continuous Current
IS
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
IF =200mA, VGS = 0V
280 mA
1.2 V
REMARK: ESD Protected Gate, 2KV HBM
REV 0.8
C-44-2
2


Part Number PZ2N7002Y
Description N-Channel Field Effect Transistor
Maker NIKO-SEM
PDF Download

PZ2N7002Y Datasheet PDF






Similar Datasheet

1 PZ2N7002M N-Channel MOSFET
UNIKC
2 PZ2N7002M N-Channel Transistor
NIKO-SEM
3 PZ2N7002Y N-Channel Field Effect Transistor
NIKO-SEM





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy