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PK6H6BA - N-Channel Enhancement Mode Field Effect Transistor

Download the PK6H6BA datasheet PDF. This datasheet also covers the PK6H6BA-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PK6H6BA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PK6H6BA
Manufacturer NIKO-SEM
File Size 248.55 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PK6H6BA Datasheet

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Other Datasheets by NIKO-SEM

Part Number Description
PK610SA N-Channel MOSFET
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PK698SA N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PK6H6BA PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7.8mΩ ID 46A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. Applications • Protection Circuits Applications. • Computer for DC to DC Converters Applications. D G S D D DD #1 S S S G G. GATE D. DRAIN S.
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