900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






NIKO-SEM

PK698SA Datasheet Preview

PK698SA Datasheet

N-Channel MOSFET

No Preview Available !

NIKO-SEM
N-ChFanienldelEEfnfehcatnTcreamnseinsttoMrodeHalogen-FrePe &KPDL6eF9aNd8-5FSxr6eAPe
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 2.4mΩ
ID
95A
D D DD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
Avalanche Current
TA = 25 °C
TA = 70 °C
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
30
±20
95
40
150
26
21
51
129
39
15.6
3
2
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
Junction-to-Case
RJA
RJC
40
°C / W
3.2
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
3ePnavcikroangme elimntitwaittihonTcAu=r2re5n°Ct i.s 51A.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
STATIC
VGS = 0V, ID = 1mA
VDS = VGS, ID = 250A
LIMITS
MIN TYP MAX
UNIT
30
1.3 1.7
2.3
V
REV1.0
1
E-16-2




NIKO-SEM

PK698SA Datasheet Preview

PK698SA Datasheet

N-Channel MOSFET

No Preview Available !

NIKO-SEM
N-ChFanienldelEEfnfehcatnTcreamnseinsttoMrodeHalogen-FrePe &KPDL6eF9aNd8-5FSxr6eAPe
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IGSS
IDSS
RDS(ON)
gfs
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 16A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
DYNAMIC
±100 nA
0.3 mA
30
2.3 3
mΩ
1.9 2.4
80 S
Input Capacitance
Ciss
3200
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
596
Reverse Transfer Capacitance
Crss
350
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.4
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
VGS = 10V
Qg
VGS = 4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V ,ID = 20A
VDS = 15V ,
ID 20A, VGS = 10V, RGEN =6Ω
63.7
33.2
8
16
30
16
60
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 1A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / S
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 51A.
29
13
65
0.6
pF
Ω
nC
nS
A
V
nS
nC
REV1.0
2
E-16-2


Part Number PK698SA
Description N-Channel MOSFET
Maker NIKO-SEM
PDF Download

PK698SA Datasheet PDF






Similar Datasheet

1 PK698SA N-Channel MOSFET
NIKO-SEM
2 PK698SA MOSFET
UNIKC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy