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NIKO-SEM

PK664BA Datasheet Preview

PK664BA Datasheet

N-Channel MOSFET

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NIKO-SEM
N-ChFanienldelEEfnfehcatnTcreamnseinsttoMrodeHalogen-FrePe &KPDL6eF6aNd4-5BFxr6eAPe
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 2.4mΩ
ID
114A
D
G
S
D D DD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
Avalanche Current
TA = 25 °C
TA = 70 °C
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
30
±20
114
72
250
23
18
48
115
59
23
2.4
1.5
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
Junction-to-Case
RJA
RJC
51
°C / W
2.1
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
3ePnavcikroangme elimntitwaittihonTcAu=r2re5n°Ct i.s 51A.
REV 1.1
1
G-25-5




NIKO-SEM

PK664BA Datasheet Preview

PK664BA Datasheet

N-Channel MOSFET

No Preview Available !

NIKO-SEM
N-ChFanienldelEEfnfehcatnTcreamnseinsttoMrodeHalogen-FrePe &KPDL6eF6aNd4-5BFxr6eAPe
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID =20A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
30
1.3 1.75 2.3
V
±100 nA
1
10 A
2.2 3
mΩ
1.7 2.4
62 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
2809
490
324
1
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
VGS = 10V
Qg
VGS = 4.5V
Qgs
VDS = 15V , VGS = 10V,
ID = 20A
Qgd
td(on)
tr
td(off)
tf
VDS = 15V ,
ID 20A, VGS = 10V, RGEN =6Ω
57.3
29.3
9
14
26
15
56
23
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / S
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 51A.
40
40
59
1
nC
nS
A
V
nS
nC
REV 1.1
2
G-25-5


Part Number PK664BA
Description N-Channel MOSFET
Maker NIKO-SEM
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PK664BA Datasheet PDF






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