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PA110BDA - N-Channel Enhancement Mode Field Effect Transistor

Download the PA110BDA datasheet PDF. This datasheet also covers the PA110BDA-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (PA110BDA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PA110BDA
Manufacturer NIKO-SEM
File Size 388.80 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PA110BDA Datasheet

📁 Similar Datasheet

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Other Datasheets by NIKO-SEM

Part Number Description
PA110BEA N-Channel Field Effect Transistor
PA110BL N-Channel Enhancement Mode Field Effect Transistor
PA102FDG P-Channel Logic Level Enhancement

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode PA110BDA Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 105mΩ ID 15A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 ° C TC = 100 ° C L = 1mH TC = 25 ° C TC = 100 ° C VDS VGS ID IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RJA Junction-to-Case RJC 1Pulse width limited by maximum junction temperature. TYPICAL 1: GATE 2: DRAIN 3: SOURCE LIMITS 100 ±20 15 9.2 45 5.4 14.