P9008HV - Dual N-Channel MOSFET

NIKO-SEM

Download the P9008HV datasheet PDF. This datasheet also covers the P9008HV-NIKO variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

P9008HV dual n-channel mosfet by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P9008HV-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P9008HV
Manufacturer	NIKO-SEM
File Size	387.96 KB
Description	Dual N-Channel MOSFET
Datasheet	P9008HV Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
P9006EDG	P-Channel MOSFET	UNIKC
P9006EDG	P-Channel MOSFET	VBsemi
P9006EI	P-Channel MOSFET	UNIKC
P9006EL	MOSFET	UNIKC
P9006ESG	P-Channel MOSFET	UNIKC

Other Datasheets by NIKO-SEM

Part Number	Description
P9006EDA	P-Channel Enhancement Mode Field Effect Transistor
P9006EDG	P-Channel Logic Level Enhancement
P9006EVA	P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NIKO-SEM Dual N-Channel Enhancement Mode Field P9008HV Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80 90mΩ 5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg LIMITS 80 ±25 5 4 25 22 25 2 1.28 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 62.