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NIKO-SEM

P9008HV Datasheet Preview

P9008HV Datasheet

Dual N-Channel MOSFET

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NIKO-SEM
Dual N-Channel Enhancement Mode Field
P9008HV
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80 90mΩ
ID
5A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
LIMITS
80
±25
5
4
25
22
25
2
1.28
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
RJA
62.5 °C / W
Junction-to-Lead
RJL
1Pulse width limited by maximum junction temperature.
35 °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±25V
VDS = 64V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 70 °C
VDS = 5V, VGS = 10V
LIMITS
UNIT
MIN TYP MAX
80
2 2.5 3.5
V
±100 nA
1
A
10
25 A
REV 1.4
1 Oct-21-2009




NIKO-SEM

P9008HV Datasheet Preview

P9008HV Datasheet

Dual N-Channel MOSFET

No Preview Available !

NIKO-SEM
Dual N-Channel Enhancement Mode Field
P9008HV
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 3A
VDS = 10V, ID = 4A
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 4A
VDS = 0.5V(BR)DSS, RL = 40Ω
ID 4A, VGS = 10V, RG = 3.3 Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = 3A, VGS = 0V
Reverse Recovery Time
trr IF =3A, dlF/dt = 100A / S
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P9008HV”, DATE CODE or LOT #
80 90 mΩ
7.5 S
964
86 pF
42
1.54 Ω
17
4 nC
5
6.0
3.8
nS
21
5.0
4
A
25
1 1.3 V
30 nS
40 nC
REV 1.4
2 Oct-21-2009


Part Number P9008HV
Description Dual N-Channel MOSFET
Maker NIKO-SEM
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