P6006BD Description
TYPICAL MAXIMUM 2.5 75 UNITS °C / W °C / W (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Volt.
P6006BD is N-Channel Transistor manufactured by NIKO-SEM.
| Manufacturer | Part Number | Description |
|---|---|---|
UNIKC |
P6006BD | N-Channel Transistor |
UNIKC |
P6006BI | N-Channel MOSFET |
UNIKC |
P6006HV | Dual N-Channel MOSFET |
TYPICAL MAXIMUM 2.5 75 UNITS °C / W °C / W (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Volt.