P6006BD Overview
TYPICAL MAXIMUM 2.5 75 UNITS °C / W °C / W (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Volt.
| Part number | P6006BD |
|---|---|
| Datasheet | P6006BD-NIKOSEM.pdf |
| File Size | 476.75 KB |
| Manufacturer | NIKO-SEM |
| Description | N-Channel Transistor |
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TYPICAL MAXIMUM 2.5 75 UNITS °C / W °C / W (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Volt.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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P6006BD | N-Channel Transistor | UNIKC |
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P6006BI | N-Channel MOSFET | UNIKC |
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P6006HV | Dual N-Channel MOSFET | UNIKC |
| Part Number | Description |
|---|---|
| P6006BI | N-Channel Transistor |
| P6010DDG | N-Channel Transistor |
| P60N03LDG | N-Channel MOSFET |