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NIKO-SEM

P4004ED Datasheet Preview

P4004ED Datasheet

P-Channel Logic Level Enhancement Mode Field Effect Transistor

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NIKO-SEM
P-Channel Logic Level Enhancement
P4004ED
Mode Field Effect Transistor
TO-252(DPAK)
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
40mΩ
ID
-21A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy 2
Power Dissipation
TC = 25 °C
TC = 70 °C
L = 0.1mH
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
Junction & Storage Temperature Range
TJ, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-40
±20
-21
-17
-70
-27
36
30
20
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
RθJc
4.1 °C / W
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2VDD = -20V . Starting TJ = 25˚C.
40 °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
-40
-2.0 -2.5
-3
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V, TJ = 125 °C
1
µA
10
On-State Drain Current1
ID(ON)
VDS = -5V, VGS = -10V
-70
A
REV 1.1
Sep-16-2010
1




NIKO-SEM

P4004ED Datasheet Preview

P4004ED Datasheet

P-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

NIKO-SEM
P-Channel Logic Level Enhancement
P4004ED
Mode Field Effect Transistor
TO-252(DPAK)
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -5V, ID = -8A
VGS = -7V, ID = -8A
VGS = -10V, ID = -10A
VDS = -10V, ID = -10A
DYNAMIC
65 73
35 50 mΩ
30 40
20 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Gate Resistance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
VGS = 0V, VDS = -20V, f = 1MHz
Qg(VGS = -10V)
Qg(VGS =-4.5V)
Qgs
Qgd
VDS = 0.5V(BR)DSS, ID = -18A
Rg VGS = 0V, VDS = 0V, f = 1MHz
td(on)
tr
VDS = -20V, RL = 2Ω
td(off)
ID -10A, VGS = -10V, RGS = 6Ω
tf
1090
175
91
17
8.5
5.5
3
4.95
6
16
26
10
pF
nC
Ω
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -1A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = -10 A, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
15.5
7.9
-21
-1
A
V
nS
nC
REV 1.1
Sep-16-2010
2


Part Number P4004ED
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker NIKO-SEM
Total Page 4 Pages
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