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P3710BTF - N-Channel Transistor

Download the P3710BTF datasheet PDF. This datasheet also covers the P3710BTF-NIKO variant, as both devices belong to the same n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P3710BTF-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
P3710BTF N-Channel MOSFET UNIKC
P3710BT N-Channel MOSFET UNIKC
P3710BD N-Channel Transistor UNIKC
P3710BD N-Channel 100V MOSFET VBsemi
P3710BV N-Channel MOSFET UNIKC

Other Datasheets by NIKO-SEM

Part Number Description
P3710BT N-Channel Transistor
P3710BK N-Channel MOSFET
P3710BV N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode P3710BTF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 37mΩ ID 19A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy2 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Starting Tj =25 °C,L=1mH,VDD=50V TYPICAL 1 23 1. GATE 2. DRAIN 3. SOURCE LIMITS 100 ±20 19 12 75 15.
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