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NIKO-SEM
Dual N-Channel Enhancement Mode P3606HK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 38mΩ
ID 15A
D1 D1 D2 D2
#1 S1 G1 S2 G2
G. GATE D. DRAIN S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Continuous Drain Current
TA = 25 °C TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation Power Dissipation
TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VDS VGS ID IDM ID IAS EAS PD
PD Tj, Tstg
LIMITS 60 ±20 15 10 40 5 4 18.6 17.3 20.8 8 2.3 1.
P3606HK Datasheet
