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P3506DTF - P-Channel Transistor

Download the P3506DTF datasheet PDF. This datasheet also covers the P3506DTF-NIKO variant, as both devices belong to the same p-channel transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P3506DTF-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NIKO-SEM

Part Number Description
P3506DT P-Channel Transistor
P3506DD P-Channel Transistor
P3506ETF P-Channel Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DTF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 35mΩ ID -20A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH Tc = 25 °C Tc = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. TYPICAL 1 23 1. GATE 2. DRAIN 3. SOURCE LIMITS -60 ±25 -20 -10 -100 -38 72 26 10.
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