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P2610BTF - N-Channel Transistor

Download the P2610BTF datasheet PDF. This datasheet also covers the P2610BTF-NIKO variant, as both devices belong to the same n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P2610BTF-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
P2610BTF N-Channel MOSFET UNIKC
P2610BT N-Channel MOSFET UNIKC
P2610BD N-Channel Transistor UNIKC
P2610BS N-Channel MOSFET UNIKC
P2610ADG N-Channel Transistor UNIKC

Other Datasheets by NIKO-SEM

Part Number Description
P2610BT N-Channel Transistor
P2610ADG N-Channel Transistor
P2610ASG N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode P2610BTF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26.8mΩ ID 24A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 ° C TC = 100 ° C L = 0.1mH TC = 25 ° C TC = 100 ° C VDS VGS ID IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RJA Junction-to-Case RJC 1Pulse width limited by maximum junction temperature. TYPICAL 1 23 1: GATE 2: DRAIN 3: SOURCE LIMITS 100 ±20 24 15 70 11.7 6.9 37.
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