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NIKO-SEM

P2060ZTFS Datasheet Preview

P2060ZTFS Datasheet

N-Channel MOSFET

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NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P2060ZTF:TO-220F
P2060ZTFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
190mΩ
ID
20A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJc
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 40mH ,starting TJ = 25°C.
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
20
12
59
4
320
48
19
-55 to 150
UNITS
V
V
A
A
mJ
W
°C
MAXIMUM
2.6
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
MIN
LIMITS
TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
VDS = 600V, VGS = 0V , TC = 25 °C
VDS = 480V, VGS = 0V , TC = 100 °C
600
2
3.1 4
V
±100 nA
1
A
100
REV 1.0
1
F-43-1




NIKO-SEM

P2060ZTFS Datasheet Preview

P2060ZTFS Datasheet

N-Channel MOSFET

No Preview Available !

NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P2060ZTF:TO-220F
P2060ZTFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 10A
VDS = 10V, ID = 10A
DYNAMIC
160 190 mΩ
15 S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
1728
1096
pF
Reverse Transfer Capacitance
Crss
25
Effective Output Capacitance4
Co(er)
VGS = 0V, VDS = 0 to 480V
82
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 480V, ID =10A, VGS = 10V
VDD = 300V, ID =10A, RG= 10Ω
60
10 nC
29
39
94
nS
105
54
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
Forward Voltage1
IS
VSD IF =10A, VGS = 0V
20 A
1.5 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF =10A, dlF/dt = 100A / S
Qrr
395 nS
4.3 uC
1Pulse test : Pulse Width 380 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
REV 1.0
2
F-43-1


Part Number P2060ZTFS
Description N-Channel MOSFET
Maker NIKO-SEM
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P2060ZTFS Datasheet PDF






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