NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P2060ZTF:TO-220F
P2060ZTFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 10A
VDS = 10V, ID = 10A
DYNAMIC
160 190 mΩ
15 S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
1728
1096
pF
Reverse Transfer Capacitance
Crss
25
Effective Output Capacitance4
Co(er)
VGS = 0V, VDS = 0 to 480V
82
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 480V, ID =10A, VGS = 10V
VDD = 300V, ID =10A, RG= 10Ω
60
10 nC
29
39
94
nS
105
54
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
Forward Voltage1
IS
VSD IF =10A, VGS = 0V
20 A
1.5 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF =10A, dlF/dt = 100A / S
Qrr
395 nS
4.3 uC
1Pulse test : Pulse Width 380 sec, Duty Cycle 2％.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
REV 1.0
2
F-43-1
