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NIKO-SEM

P2003ND5G Datasheet Preview

P2003ND5G Datasheet

N- & P-Channel Field Effect Transistor

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NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2003ND5G
TO-252-5
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 30 20mΩ
P-Channel -30 36mΩ
ID
25A
-19A
D1
G1
S1
D2
G2
S2
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current2
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
TC = 25 °C
Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
TL
N-Channel P-Channel UNITS
30 -30 V
±20 ±20 V
25 -19
20 -15
9 -7
A
7 -5.7
65 -45
19 -18
18 17 mJ
21
13
W
3
2
-55 to 150
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1 Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
STATIC
VGS = 0V, ID = 250μA
VGS = 0V, ID = -250μA
MAXIMUM
6
42
UNITS
°C / W
°C / W
LIMITS
UNIT
MIN TYP MAX
N-Ch 30
P-Ch -30
V
REV 1.0
May-21-2009
1




NIKO-SEM

P2003ND5G Datasheet Preview

P2003ND5G Datasheet

N- & P-Channel Field Effect Transistor

No Preview Available !

NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2003ND5G
TO-252-5
Halogen-Free & Lead-Free
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State Resistance1
Forward Transconductance1
VGS(th)
VDS = VGS, ID = 250μA
VDS = VGS, ID = -250μA
N-Ch 1
P-Ch -1
VDS = 0V, VGS = ±20V
N-Ch
IGSS
VDS = 0V, VGS = ±20V
P-Ch
VDS = 24V, VGS = 0V
N-Ch
VDS = -24V, VGS = 0V
P-Ch
IDSS
VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch
VDS = -20V, VGS = 0V, TJ = 55 °C P-Ch
ID(ON)
VDS = 5V, VGS = 10V
VDS =-5V, VGS = -10V
N-Ch 65
P-Ch -45
VGS = 4.5V, ID = 6A
N-Ch
RDS(ON)
VGS = -4.5V, ID = -5A
VGS = 10V, ID = 7A
P-Ch
N-Ch
VGS = -10V, ID = -6A
P-Ch
VDS = 10V, ID = 7A
N-Ch
gfs
VDS = -10V, ID = -6A
P-Ch
1.7 2.5
-1.6 -2.5
±100
nA
±100
1
-1
10 μA
-10
A
26 31
58 61
mΩ
17 20
35 36
29
S
15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
DYNAMIC
N-Ch
Ciss
N-Channel
P-Ch
VGS = 0V, VDS = 10V, f = 1MHz N-Ch
Coss
P-Channel
P-Ch
VGS = 0V, VDS = -10V, f = 1MHz N-Ch
Crss
P-Ch
Rg VGS = 0V, VDS = 0V, f = 1MHz
N-Ch
P-Ch
Qg
N-Channel
N-Ch
VDS = 0.5V(BR)DSS, VGS = 10V, P-Ch
ID = 6A
N-Ch
Qgs
P-Channel
P-Ch
VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch
Qgd
ID = -5A
P-Ch
480
691
162
167
100
117
2
6.27
9.8
12.8
2.1
2.9
1.8
2.1
pF
Ω
nC
REV 1.0
May-21-2009
2


Part Number P2003ND5G
Description N- & P-Channel Field Effect Transistor
Maker NIKO-SEM
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P2003ND5G Datasheet PDF






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