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NIKO-SEM

P2003BDG Datasheet Preview

P2003BDG Datasheet

N-Channel MOSFET

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NIKO-SEM
N-Channel Logic Level Enhancement
P2003BDG
Mode Field Effect Transistor
TO-252 (DPAK)
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 20mΩ
ID
32A
D
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
LIMITS
25
±20
32
20
110
23
27
35
14
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
Case-to-Heatsink
RCS
1Pulse width limited by maximum junction temperature.
2Duty cycle 1
TYPICAL
0.7
MAXIMUM
3.6
75
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
25
1.0 1.8
2.5
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
25
A
250
VDS = 10V, VGS = 10V
110
A
REV 1.0
Sep-09-2009
1




NIKO-SEM

P2003BDG Datasheet Preview

P2003BDG Datasheet

N-Channel MOSFET

No Preview Available !

NIKO-SEM
N-Channel Logic Level Enhancement
P2003BDG
Mode Field Effect Transistor
TO-252 (DPAK)
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 15A
VDS = 5V, ID = 15A
29 41
mΩ
14 20
19 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
492
221
187
1.5
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg (VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, ID = 15A
VDD = 15V
ID 15A, VGS = 10V, RGS = 6Ω
14.7
7.7
2.3
5.6
10
17
34
27
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 15A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 15A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
27
36
25
1.4
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P2003BDG”, DATE CODE or LOT #
REV 1.0
Sep-09-2009
2


Part Number P2003BDG
Description N-Channel MOSFET
Maker NIKO-SEM
PDF Download

P2003BDG Datasheet PDF






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