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NIKO-SEM

P1825HTFB Datasheet Preview

P1825HTFB Datasheet

N-Channel Field Effect Transistor

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NIKO-SEM
N-Channel Enhancement Mode
P1825HTFB
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
230mΩ
ID
18A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
1: GATE
2: DRAIN
3: SOURCE
LIMITS
250
±20
18
5
32
8
32
35
14
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
62.5
3.6
UNITS
°C /W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
250
VDS = VGS, ID = 250A
1
VDS = 0V, VGS = ±20V
VDS = 250V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125 ° C
VGS = 4.5V, ID = 9A
VGS =10V, ID = 9A
23
±100
1
10
255 298
182 230
V
nA
A
mΩ
REV 1.0
1
G-36-2




NIKO-SEM

P1825HTFB Datasheet Preview

P1825HTFB Datasheet

N-Channel Field Effect Transistor

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
P1825HTFB
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = 10V, ID = 9A
DYNAMIC
13
Input Capacitance
Ciss
835
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
119
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 10V , VDS = 200V
ID =18A
VDS = 125V ,
ID 18A, VGS = 10V, RGEN =6Ω
17
25
4
11
14
50
40
70
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current
Forward Voltage1
IS
VSD IF = 18A, VGS = 0V
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
IF= 18A, dI/dt=100A/μs
194
1.26
18
1.2
S
pF
nC
nS
A
V
nS
uC
REV 1.0
2
G-36-2


Part Number P1825HTFB
Description N-Channel Field Effect Transistor
Maker NIKO-SEM
Total Page 4 Pages
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