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NIKO-SEM

P1525ETFB Datasheet Preview

P1525ETFB Datasheet

N-Channel MOSFET

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NIKO-SEM
N-Channel Enhancement Mode P1525ETFB
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
260mΩ
ID
15A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
250
±20
15
9.4
60
7.6
29
37
15
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATING
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
3.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
250
V
12 3
IGSS VDS = 0V, VGS = ±20V
±100 nA
VDS = 250V, VGS = 0V
IDSS
VDS = 200V, VGS = 0V, TJ = 125 °C
1
A
10
REV 1.0
1
F-34-5




NIKO-SEM

P1525ETFB Datasheet Preview

P1525ETFB Datasheet

N-Channel MOSFET

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode P1525ETFB
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Drain-Source
On-State Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 7.5A
VGS = 4.5V, ID = 7.5A
VDS = 10V, ID = 7.5A
DYNAMIC
200 260
mΩ
216 310
13 S
Input Capacitance
Ciss
861
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
126
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
VDS =200V, VGS = 10V,
ID = 15A
VDD = 125V,
ID 15A, VGS = 10V, RGEN = 6Ω
17
27.5
3
9.5
16
42
51
Fall Time2
tf
63
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
Forward Voltage1
IS
VSD IF = 15A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 15A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
154
0.7
15
1
pF
nC
nS
A
V
nS
uC
REV 1.0
2
F-34-5


Part Number P1525ETFB
Description N-Channel MOSFET
Maker NIKO-SEM
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P1525ETFB Datasheet PDF






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