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NIKO-SEM

P1520ETF Datasheet Preview

P1520ETF Datasheet

N-Channel MOSFET

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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1520ETF
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
198mΩ
ID
15A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
1: GATE
2: DRAIN
3: SOURCE
LIMITS
200
±20
15
9.3
45
16.5
136
32
13
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
62.5
3.8
UNITS
°C/W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
200
VDS = VGS, ID = 250A
1
VDS = 0V, VGS = ±20V
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125 ° C
1.8 3
±100
1
10
V
nA
A
REV1.0
1
F-15-3




NIKO-SEM

P1520ETF Datasheet Preview

P1520ETF Datasheet

N-Channel MOSFET

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1520ETF
TO-220F
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 7.5A
VGS = 4.5V, ID = 7.5A
VDS = 10V, ID = 7.5A
DYNAMIC
153 198
165 218 mΩ
14 S
Input Capacitance
Ciss
869
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
150
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 160V , ID =15A ,
VGS = 10V
VDS = 100V , ID 15A,
VGS = 10V, RGEN =25Ω
22
29
2.9
10
29
133
157
111
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current3
Forward Voltage1
IS
VSD IF = 15A, VGS = 0V
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
IF= 15A, dI/dt=100A/μs
165
0.87
15
1
pF
nC
nS
A
V
nS
uC
REV1.0
2
F-15-3


Part Number P1520ETF
Description N-Channel MOSFET
Maker NIKO-SEM
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P1520ETF Datasheet PDF






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