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NIKO-SEM

P1504BDG Datasheet Preview

P1504BDG Datasheet

N-Channel MOSFET

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NIKO-SEM
N-Channel Logic Level Enhancement P1504BDG
Mode Field Effect Transistor
TO-252 (DPAK)
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 15mΩ
ID
40A
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.3mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
1. GATE
2. DRAIN
3. SOURCE
LIMITS
40
±20
40
25
85
22
72
42
17
-55 to 150
275
UNITS
V
V
A
A
mJ
W
°C
MAXIMUM
3
75
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V, TC = 125 °C
VDS = 10V, VGS = 10V
LIMITS
UNIT
MIN TYP MAX
40
1.7 2.0
3.0
V
±250 nA
1
µA
10
85 A
REV 1.1
1 Mar-11-2009




NIKO-SEM

P1504BDG Datasheet Preview

P1504BDG Datasheet

N-Channel MOSFET

No Preview Available !

NIKO-SEM
N-Channel Logic Level Enhancement P1504BDG
Mode Field Effect Transistor
TO-252 (DPAK)
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 7V, ID = 10A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
DYNAMIC
18 27
12.5 15
25
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = 10V, f = 1MHz
1145
255
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 10A
VDS = 20V, RL = 1Ω
ID 1A, VGS = 10V, RGEN = 6Ω
95
23
3.6
3.0
3.2
10.8
17.1
5.3
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = IS, VGS = 0V
Reverse Recovery Time
trr IF = IS, dlF/dt = 100A / µS
60
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
43
32
1.3
mΩ
S
pF
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P1504BDG”, DATE CODE or LOT #
REV 1.1
2 Mar-11-2009


Part Number P1504BDG
Description N-Channel MOSFET
Maker NIKO-SEM
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P1504BDG Datasheet PDF






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